The 2SA1648 is a PNP silicon epitaxial transistor featuring fast switching speed for high current control. It features low collector saturation voltage, as well as high DC current gain and excellent ...

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today ...

Neubiberg, Germany: The 650V CoolMOS C6/E6 series of high-performance power MOSFETs combine the advantages of modern superjunction (SJ) devices with easy control of switching behaviour as well as high ...

High-voltage power devices and transistors form the backbone of modern energy conversion systems, serving critical roles in renewable energy, automotive powertrains and industrial drives. These ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Recent advances in semiconductor technology have pushed the concept of transistors with switching speeds greater than one terahertz, or one trillion cycles per second, closer to reality. Transistors ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon MOSFETs EL SEGUNDO, CA, UNITED STATES ...

Infineon is pushing gallium nitride into the lucrative world of laptop bricks. Infineon Technologies AG has revealed that Chicony Power has selected its CoolGaN Transistors G5 for multiple high-power ...

A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...