During their keynote at FMS, Toshiba also announced that they’ll be producing the world’s first 8-stack and 16-stack TSV (Through-Silicon-Via) NAND packages. Thanks to TSV NAND stacking, Toshiba is ...

A new research paper titled “Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages” was published by researchers at Sungkyunkwan University and Korea University.

TOKYO--(BUSINESS WIRE)--Toshiba Corporation (TOKYO:6502) today announced the development of the world’s first *1 16-die (max.) stacked NAND flash memory utilizing Through Silicon Via (TSV) technology.

Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...

Samsung Electronics is reportedly reducing NAND flash production like other competitors, which could lead to higher product prices. Related companies are fiercely competing in stacking (layer count ...

NAND flash memory is a key enabler in today’s systems, but it’s a difficult business. NAND suppliers require deep pockets and strong technology to survive in the competitive landscape. And going ...

Samsung is reportedly on the verge of announcing its next-generation V-NAND technology for SSDs, which will feature 290 layers for the first time. The company currently offers 236-layer V-NAND, so ...

Check out more coverage of the 2022 Flash Memory Summit. Micron has started mass production of its most advanced triple-level-cell (TLC) 3D NAND chips made up of 232 layers of memory cells, pulling ...

TL;DR: Samsung Electronics has developed a 400-layer NAND technology, surpassing SK hynix's 321-layer NAND. This positions Samsung as a leader in NAND flash technology. The 400-layer NAND will enter ...