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11:14
jove.com
Video: Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
14.4K Views. Technische Universität Dresden. The overall goal of the methods presented here is to determine optical, electrical, and structural properties of extended defects, such as dislocations or grain boundaries in semiconductor materials using the scanning electron microscope. These methods can help on the key questions in the ...
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